Title :
Heavily carbon doped InGaAs lattice matched to InP grown by LP-MOCVD using TMIn, TMGa and liquid CCl4
Author :
Hong, K. ; Pavlidis, D.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Heavily carbon doped InGaAs lattice matched to InP was grown by LP-MOCVD using all-methyl metalorganics and liquid CCl4 as a carbon source. The impact of growth conditions on conduction type and alloy composition of InGaAs was studied. The effect of thermal annealing conditions on the hole concentration and mobility of C-InGaAs was investigated, and carbon displacement from the group III site to the arsenic site as well as reduced hydrogen passivation are suggested as possible mechanisms for the significant increase of hole concentration upon annealing. Base specific contact resistances as low as 5×10 -7 Ω-cm2 were demonstrated by depositing Ti/Pt/Au non-alloyed ohmic contacts on annealed base layers
Keywords :
III-V semiconductors; annealing; carbon; contact resistance; gallium arsenide; heavily doped semiconductors; hole density; hole mobility; indium compounds; ohmic contacts; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; C displacement; InGaAs:C-InP; InP; LP-MOCVD; TMGa; TMIn; Ti-Pt-Au; Ti/Pt/Au nonalloyed ohmic contacts; all-methyl metalorganics; alloy composition; base specific contact resistances; conduction type; growth conditions; heavily C doped InGaAs; hole concentration; hole mobility; lattice matching; liquid CCl4; reduced H passivation; thermal annealing conditions; Gallium arsenide; Hydrogen; Indium gallium arsenide; Indium phosphide; Inductors; Lattices; MOCVD; Organic materials; Steel; Temperature distribution;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522098
