Title :
Chlorine auto-doping by chloride vapor phase epitaxial growth of InP
Author :
Iwasaki, T. ; Iguchi, Y. ; Yamabayashi, N. ; Yoneyama, S.
Author_Institution :
Optoelectronics R&D, Sumitomo Electr. Ind. Ltd., Osaka, Japan
Abstract :
Chlorine auto-doping phenomenon is found for the first time in InP epitaxial growth by using the PCl3/InP/H2 system. Chlorine atoms act as donors in the epitaxial layer and the carrier concentration is controlled by the facet of the InP substrate. The carrier concentration of the InP layer on (111)B facet is 103 times higher than that on the (100)2° off [110] substrate
Keywords :
III-V semiconductors; carrier density; chlorine; indium compounds; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; surface structure; vapour phase epitaxial growth; Cl auto-doping; InP; InP epitaxial growth; InP substrate facet; InP:Cl; PCl3; PCl3-InP-H2; PCl3/InP/H2 system; carrier concentration; chloride vapor phase epitaxial growth; donors; growth rate; surface structure; Atomic layer deposition; Epitaxial growth; Epitaxial layers; Gallium arsenide; Hydrogen; Impurities; Indium phosphide; Inductors; Substrates; Toy industry;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522099
