• DocumentCode
    3132627
  • Title

    Chlorine auto-doping by chloride vapor phase epitaxial growth of InP

  • Author

    Iwasaki, T. ; Iguchi, Y. ; Yamabayashi, N. ; Yoneyama, S.

  • Author_Institution
    Optoelectronics R&D, Sumitomo Electr. Ind. Ltd., Osaka, Japan
  • fYear
    1995
  • fDate
    9-13 May 1995
  • Firstpage
    148
  • Lastpage
    151
  • Abstract
    Chlorine auto-doping phenomenon is found for the first time in InP epitaxial growth by using the PCl3/InP/H2 system. Chlorine atoms act as donors in the epitaxial layer and the carrier concentration is controlled by the facet of the InP substrate. The carrier concentration of the InP layer on (111)B facet is 103 times higher than that on the (100)2° off [110] substrate
  • Keywords
    III-V semiconductors; carrier density; chlorine; indium compounds; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; surface structure; vapour phase epitaxial growth; Cl auto-doping; InP; InP epitaxial growth; InP substrate facet; InP:Cl; PCl3; PCl3-InP-H2; PCl3/InP/H2 system; carrier concentration; chloride vapor phase epitaxial growth; donors; growth rate; surface structure; Atomic layer deposition; Epitaxial growth; Epitaxial layers; Gallium arsenide; Hydrogen; Impurities; Indium phosphide; Inductors; Substrates; Toy industry;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
  • Conference_Location
    Hokkaido
  • Print_ISBN
    0-7803-2147-2
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1995.522099
  • Filename
    522099
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3132627