• DocumentCode
    3132630
  • Title

    Design and fabrication of passive components using TF-IPD technology

  • Author

    Lee, Tsaitzu ; Lin, Yo-Shen ; Chen, Chiajium

  • Author_Institution
    Touch Micro-Syst. Technol. Corp., Yangmei, Taiwan
  • fYear
    2009
  • fDate
    21-23 Oct. 2009
  • Firstpage
    722
  • Lastpage
    725
  • Abstract
    In this paper, we develop a low-cost manufacturing technology for RF system-in-package applications. This high-performance process technology for integrated passive devices is achieved by electroplated formed thick Cu metal trace and back-side substrate thinning process on 8-inch glass wafer. This paper first presents investigations for common integration of inductors, resistors, capacitors in this thin film process technology and examines their RF performance. Then, a lowpass filter design for 2.4 GHz ISM band application is also demonstrated. Good RF performance as well as small form factor are achieved.
  • Keywords
    copper; electroplating; integrated circuit design; integrated circuit manufacture; low-pass filters; passive networks; radiofrequency integrated circuits; substrates; system-in-package; thin film circuits; ISM band application; RF system-in-package applications; TF-IPD technology; back-side substrate thinning process; electroplated formed thick Cu metal trace; glass wafer; high-performance process technology; integrated passive devices; low-cost manufacturing technology; lowpass filter design; passive components; thin film process technology; Fabrication; EM simulation; Thin-film integrated passive device (TF-IPD); filter; glass substrate;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microsystems, Packaging, Assembly and Circuits Technology Conference, 2009. IMPACT 2009. 4th International
  • Conference_Location
    Taipei
  • Print_ISBN
    978-1-4244-4341-3
  • Electronic_ISBN
    978-1-4244-4342-0
  • Type

    conf

  • DOI
    10.1109/IMPACT.2009.5382289
  • Filename
    5382289