DocumentCode
3132630
Title
Design and fabrication of passive components using TF-IPD technology
Author
Lee, Tsaitzu ; Lin, Yo-Shen ; Chen, Chiajium
Author_Institution
Touch Micro-Syst. Technol. Corp., Yangmei, Taiwan
fYear
2009
fDate
21-23 Oct. 2009
Firstpage
722
Lastpage
725
Abstract
In this paper, we develop a low-cost manufacturing technology for RF system-in-package applications. This high-performance process technology for integrated passive devices is achieved by electroplated formed thick Cu metal trace and back-side substrate thinning process on 8-inch glass wafer. This paper first presents investigations for common integration of inductors, resistors, capacitors in this thin film process technology and examines their RF performance. Then, a lowpass filter design for 2.4 GHz ISM band application is also demonstrated. Good RF performance as well as small form factor are achieved.
Keywords
copper; electroplating; integrated circuit design; integrated circuit manufacture; low-pass filters; passive networks; radiofrequency integrated circuits; substrates; system-in-package; thin film circuits; ISM band application; RF system-in-package applications; TF-IPD technology; back-side substrate thinning process; electroplated formed thick Cu metal trace; glass wafer; high-performance process technology; integrated passive devices; low-cost manufacturing technology; lowpass filter design; passive components; thin film process technology; Fabrication; EM simulation; Thin-film integrated passive device (TF-IPD); filter; glass substrate;
fLanguage
English
Publisher
ieee
Conference_Titel
Microsystems, Packaging, Assembly and Circuits Technology Conference, 2009. IMPACT 2009. 4th International
Conference_Location
Taipei
Print_ISBN
978-1-4244-4341-3
Electronic_ISBN
978-1-4244-4342-0
Type
conf
DOI
10.1109/IMPACT.2009.5382289
Filename
5382289
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