Title :
Step bunching of InP caused by heavy doping of Se in metalorganic chemical vapor deposition and its application to device fabrication
Author :
Takaoka, Keiji ; Kushibe, Mitsuhiro ; Funemizu, Masahisa ; Izumiya, T. ; Kokubun, Yoshihiro
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
We have found that step bunching occurs in heavily Se doped InP, grown by MOCVD, for both (001) and (111)B planes and that it occurs with a lower Se source gas flow rate for the (111)B plane than for the (001) plane. Using this heavy Se doping, we have successfully fabricated novel planar buried heterostructure lasers on p-InP substrates, in which the Se-doped n-InP current blocking layer does not make contact with the n-InP cladding layer
Keywords :
III-V semiconductors; heavily doped semiconductors; indium compounds; quantum well lasers; selenium; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; (001) planes; (111)B planes; InP; InP:Se; MOCVD; Se source gas flow rate; Se-doped n-InP current blocking layer; device fabrication; heavily Se doped InP; heavy doping; metalorganic chemical vapor deposition; n-InP cladding layer; p-InP substrates; planar buried heterostructure lasers; step bunching; Anisotropic magnetoresistance; Chemical vapor deposition; Doping; Etching; Fluid flow; Gas lasers; Indium phosphide; Laser applications; Optical device fabrication; Surface morphology;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522100
