Title :
A novel technique for semi-insulating InP(Fe) by chloride VPE
Author :
Hongbo, Sun ; Songyan, Chen ; Yudong, Li ; Lizhong, Hu ; Shiyong, Liu
Author_Institution :
State Key Lab. on Integrated Optoelectronics, Jilin Univ., Changchun, China
Abstract :
The chloride vapor phase epitaxial (VPE) growth of semi-insulating (SI)InP (Fe) using N2+H2 as a carrier gas is reported for the first time. Iron doping is achieved by using FeCl2 generated by reaction of HCl and Fe. The transport of iron as FeCl2 is greatly improved by the use of N2. A proper N2/H2 ratio for the iron incorporation is discussed and a high valve of 5×108 Ωcm is obtained. Specifically, the technique has been successfully applied to the preparation of multi-quantum-well (MQW) laser diodes
Keywords :
III-V semiconductors; indium compounds; iron; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; HCl-Fe; HCl-Fe reaction; InP:Fe; MQW laser diodes; N2-H2; N2-H2 carrier gas; chloride VPE; chloride vapor phase epitaxial growth; multi-quantum-well laser diodes; semi-insulating InP(Fe); Conductivity; Diode lasers; Doping; Fluid flow; Hydrogen; Indium phosphide; Integrated optoelectronics; Iron; Quantum well devices; Valves;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522101
