Title :
Optical and structural properties of In0.53Ga0.47 As/In0.52Al0.48As multiple quantum wells grown on vicinal (110) InP substrates by molecular beam epitaxy
Author :
Asai, H. ; Oe, K. ; Iwamura, H.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
We investigated the MBE growth and optical characteristics of In 0.53Ga0.47As/In0.52Al0.48As MQWs on vicinal (110) InP substrates. The MQWs grown on the (110) substrates tilted towards [001¯] indicate narrower excitonic linewidth in absorption spectra and stronger photoluminescence intensity than those of (001) MQWs. On the other hand, for the MQWs on the (110) tilted towards [001], we observed no excitonic absorption peaks and extremely-weak and broad PL spectra. The TED and TEM observations have clarified that these poor characteristics are due to structural fluctuation and atomic ordering in the MQWs. We also discuss a possible mechanism of the degradation
Keywords :
III-V semiconductors; aluminium compounds; electron diffraction; excitons; gallium arsenide; indium compounds; infrared spectra; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; spectral line breadth; transmission electron microscopy; 1.0 to 1.7 mum; 1.3 to 1.8 mum; In0.53Ga0.47As-In0.52Al0.48 As; In0.53Ga0.47As/In0.52Al0.48 As multiple quantum wells; InP; MBE growth; MQW; PL spectra; TED observations; TEM observations; absorption spectra; atomic ordering; degradation; molecular beam epitaxy; narrower excitonic linewidth; optical characteristics; stronger photoluminescence intensity; structural fluctuation; structural properties; transmission electron diffraction; vicinal (110) InP substrates; Absorption; Atom optics; Atomic layer deposition; Degradation; Fluctuations; Indium phosphide; Molecular beam epitaxial growth; Quantum well devices; Substrates; Surface morphology;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522103
