Title :
Marginal test of DRAMs by masked α-radiation
Author :
Gleis, D. ; Hoffmann, K.
Author_Institution :
Fakultat fur Elektrotech., Univ. der Bundeswehr Munchen, Neubiberg, West Germany
Abstract :
A marginal test of DRAMs (dynamic random-access memories) by masked α-radiation has been performed at all operation conditions. The averaged soft error rates (SERs) of individual circuits have been determined. Differences in SERs are used to analyze design margins and process tolerances. Measurements on a 256K DRAM show that asymmetric sense amplifiers caused by process tolerances can be discovered
Keywords :
alpha-particle effects; integrated circuit testing; integrated memory circuits; random-access storage; 256 kbits; DRAMs; asymmetric sense amplifiers; averaged soft error rates; design margins; masked α-radiation; operation conditions; process tolerances; Capacitance; Circuit testing; Differential amplifiers; Electron beams; Error analysis; Pattern analysis; Performance evaluation; Process design; Random access memory; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 1988., Proceedings of the IEEE 1988
Conference_Location :
Rochester, NY
DOI :
10.1109/CICC.1988.20948
