Thermal-structural coupled analysis in heating cycle of semiconductor

A model for RF heated hot wall furnace and a temperature sensor in rapid thermal process is simulated. The mode includes electric induction current, thermal and strain-stress analysis. The model considers a heating cycle and shows temperature variation in wafer, which has reached a stable temperature and then cooled down. And the thermal sensor is compared for inspection the temperature of wafer. Results show the same tendency of temperature variation for the sensor and the wafer, and the sensor radiation has no stable value that should be improved further.