Title :
3-D finite-element modeling of multi-finger high-power amplifiers with compact heat-dissipation packaging structures
Author :
Tseng, H.C. ; Chen, J.Y.
Author_Institution :
Nanotechnol. R&D Center, Kun Shan Univ., Yung-Kang, Taiwan
Abstract :
The temperature distribution of heat-dissipation structures has been designed using the 3-D thermal FEM method. Results on multi-finger InGaP C-up HBTs demonstrate that the thickness of heat-dissipation packaging configurations can be further reduced by 40%, and the achieved heat-dissipation performance will not be deteriorated. From this efficient analysis, it is believed that miniaturization of C-up HBTs with compact heat-dissipation structures can be used in small-scale HPAs.
Keywords :
cooling; finite element analysis; gallium compounds; heterojunction bipolar transistors; indium compounds; power amplifiers; thermal management (packaging); 3-D finite-element modeling; 3-D thermal FEM method; collector-up HBT; heat-dissipation packaging structures; multifinger high-power amplifiers; small-scale HPA; Cities and towns; Fingers; Finite element methods; Heat transfer; Heterojunction bipolar transistors; High power amplifiers; Packaging; Temperature distribution; Thermal conductivity; Thermal resistance;
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference, 2009. IMPACT 2009. 4th International
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-4341-3
Electronic_ISBN :
978-1-4244-4342-0
DOI :
10.1109/IMPACT.2009.5382298
