3-D finite-element modeling of multi-finger high-power amplifiers with compact heat-dissipation packaging structures

Author

Tseng, H.C. ; Chen, J.Y.

Author_Institution

Nanotechnol. R&D Center, Kun Shan Univ., Yung-Kang, Taiwan

fYear

2009

fDate

21-23 Oct. 2009

Firstpage

18

Lastpage

19

Abstract

The temperature distribution of heat-dissipation structures has been designed using the 3-D thermal FEM method. Results on multi-finger InGaP C-up HBTs demonstrate that the thickness of heat-dissipation packaging configurations can be further reduced by 40%, and the achieved heat-dissipation performance will not be deteriorated. From this efficient analysis, it is believed that miniaturization of C-up HBTs with compact heat-dissipation structures can be used in small-scale HPAs.

Keywords

cooling; finite element analysis; gallium compounds; heterojunction bipolar transistors; indium compounds; power amplifiers; thermal management (packaging); 3-D finite-element modeling; 3-D thermal FEM method; collector-up HBT; heat-dissipation packaging structures; multifinger high-power amplifiers; small-scale HPA; Cities and towns; Fingers; Finite element methods; Heat transfer; Heterojunction bipolar transistors; High power amplifiers; Packaging; Temperature distribution; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microsystems, Packaging, Assembly and Circuits Technology Conference, 2009. IMPACT 2009. 4th International

Conference_Location

Taipei

Print_ISBN

978-1-4244-4341-3

Electronic_ISBN

978-1-4244-4342-0

Type

conf

DOI

10.1109/IMPACT.2009.5382298

Filename

5382298