Title :
SiC Avalanche Photodiodes
Author :
Campbell, Joe C. ; Guo, Xiangyi ; Liu, Han-Din ; Mcintosh, Dion
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Univ., Charlottesville, VA
Abstract :
In summary, 4H- and 6HSiC avalanche photodiodes have been fabricated and characterized. These APDs exhibit low dark current, high uniform gain, low excess noise, and external quantum efficiency in excess of 50%
Keywords :
avalanche photodiodes; optical fabrication; semiconductor device measurement; silicon compounds; wide band gap semiconductors; APD characterization; HSiC; SiC avalanche photodiodes; avalanche photodiode fabrication; dark current; external quantum efficiency; Application software; Avalanche photodiodes; Dark current; Detectors; Gold; Military communication; Military computing; Pulse measurements; Silicon carbide; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.279078
