• DocumentCode
    3132813
  • Title

    SiC Avalanche Photodiodes

  • Author

    Campbell, Joe C. ; Guo, Xiangyi ; Liu, Han-Din ; Mcintosh, Dion

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Virginia Univ., Charlottesville, VA
  • fYear
    2006
  • fDate
    Oct. 2006
  • Firstpage
    861
  • Lastpage
    862
  • Abstract
    In summary, 4H- and 6HSiC avalanche photodiodes have been fabricated and characterized. These APDs exhibit low dark current, high uniform gain, low excess noise, and external quantum efficiency in excess of 50%
  • Keywords
    avalanche photodiodes; optical fabrication; semiconductor device measurement; silicon compounds; wide band gap semiconductors; APD characterization; HSiC; SiC avalanche photodiodes; avalanche photodiode fabrication; dark current; external quantum efficiency; Application software; Avalanche photodiodes; Dark current; Detectors; Gold; Military communication; Military computing; Pulse measurements; Silicon carbide; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
  • Conference_Location
    Montreal, Que.
  • Print_ISBN
    0-7803-9555-7
  • Electronic_ISBN
    0-7803-9555-7
  • Type

    conf

  • DOI
    10.1109/LEOS.2006.279078
  • Filename
    4054458
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3132813