Title :
Ge/Si Heterojunction Photodiodes by Wafer Bonding
Author_Institution :
Dept. of Electron. & Photonics Syst. Eng., Kochi Univ. of Technol.
Abstract :
Ge/Si heterojunction photodiodes having a mesa structure were fabricated by wet wafer bonding. The device exhibited photocurrent at wavelengths of 1310 and 1550 nm with better than 40% quantum efficiency
Keywords :
elemental semiconductors; germanium; optical communication equipment; optical fabrication; optical fibre communication; photoconductivity; photodiodes; photoemission; semiconductor heterojunctions; silicon; wafer bonding; 1310 nm; 1550 nm; Ge-Si; heterojunction photodiodes fabrication; photocurrent; quantum efficiency; wet wafer bonding; Absorption; Dark current; Electrodes; Heterojunctions; Indium phosphide; Ionization; Optical sensors; Photodiodes; Systems engineering and theory; Wafer bonding;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.279079
