DocumentCode
3132830
Title
Ge/Si Heterojunction Photodiodes by Wafer Bonding
Author
Kanbe, Hiroshi
Author_Institution
Dept. of Electron. & Photonics Syst. Eng., Kochi Univ. of Technol.
fYear
2006
fDate
Oct. 2006
Firstpage
863
Lastpage
864
Abstract
Ge/Si heterojunction photodiodes having a mesa structure were fabricated by wet wafer bonding. The device exhibited photocurrent at wavelengths of 1310 and 1550 nm with better than 40% quantum efficiency
Keywords
elemental semiconductors; germanium; optical communication equipment; optical fabrication; optical fibre communication; photoconductivity; photodiodes; photoemission; semiconductor heterojunctions; silicon; wafer bonding; 1310 nm; 1550 nm; Ge-Si; heterojunction photodiodes fabrication; photocurrent; quantum efficiency; wet wafer bonding; Absorption; Dark current; Electrodes; Heterojunctions; Indium phosphide; Ionization; Optical sensors; Photodiodes; Systems engineering and theory; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location
Montreal, Que.
Print_ISBN
0-7803-9555-7
Electronic_ISBN
0-7803-9555-7
Type
conf
DOI
10.1109/LEOS.2006.279079
Filename
4054459
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