Photoluminescence investigation of InGaAs/InP quantum wells grown by gas-source molecular-beam epitaxy with source-supply interruption

Author

Hosomi, Kazuhiko ; Mozume, Teruo ; Kashima, Hideo ; Ouchi, Kiyosi

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

169

Lastpage

172

Abstract

We present a detailed study of the effects of SSI on the interface configuration of lattice-matched InGaAs/InP heterostructures. Low-temperature photoluminescence (PL) analysis of InGaAs/InP quantum wells (QWs) with well thickness ranging from 1 to 16 nm was performed and the results were compared with theoretical calculations taking into account the transition layer at the heterointerface

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; interface structure; photoluminescence; semiconductor growth; semiconductor quantum wells; 1 to 16 nm; InGaAs-InP; InGaAs/InP quantum wells; gas-source molecular-beam epitaxy; heterointerface; interface configuration; lattice-matched InGaAs/InP heterostructures; low-temperature photoluminescence; photoluminescence investigation; source-supply interruption; transition layer; well thickness; Atomic layer deposition; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Photoluminescence; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522105

Filename

522105