• DocumentCode
    3132860
  • Title

    Pentacarbonyliron doping for semi-insulating InP by chemical beam epitaxy

  • Author

    Tsang, W.T. ; Walker, J.D.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • fYear
    1995
  • fDate
    9-13 May 1995
  • Firstpage
    173
  • Lastpage
    174
  • Abstract
    We present semi-insulating iron-doped InP grown by chemical beam epitaxy using the gaseous iron Fe(CO)5. SIMS analysis shows that iron incorporation is proportional to the Fe(CO)5 flow rate over the 5×1017-5×1019 cm-3 range studied. Use of Fe(CO)5 as an iron source also leads to high αp 1018 cm-3 carbon incorporation in the material, but this does not interfere with semi-insulating behavior. The material shows 30 MΩ-cm resistivity for a broad range of Fe(CO)5 flow rates
  • Keywords
    III-V semiconductors; chemical beam epitaxial growth; electrical resistivity; indium compounds; iron; secondary ion mass spectra; semiconductor doping; semiconductor growth; 30 Mohmcm; Fe(CO)5 flow rate; InP; SIMS analysis; chemical beam epitaxy; iron incorporation; pentacarbonyliron doping; resistivity; semi-insulating InP; Chemicals; Conductivity; Doping; Epitaxial growth; Indium phosphide; Iron; Molecular beam epitaxial growth; Optical materials; Organic materials; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
  • Conference_Location
    Hokkaido
  • Print_ISBN
    0-7803-2147-2
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1995.522106
  • Filename
    522106
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3132860