Title :
Pentacarbonyliron doping for semi-insulating InP by chemical beam epitaxy
Author :
Tsang, W.T. ; Walker, J.D.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
We present semi-insulating iron-doped InP grown by chemical beam epitaxy using the gaseous iron Fe(CO)5. SIMS analysis shows that iron incorporation is proportional to the Fe(CO)5 flow rate over the 5×1017-5×1019 cm-3 range studied. Use of Fe(CO)5 as an iron source also leads to high αp 1018 cm-3 carbon incorporation in the material, but this does not interfere with semi-insulating behavior. The material shows 30 MΩ-cm resistivity for a broad range of Fe(CO)5 flow rates
Keywords :
III-V semiconductors; chemical beam epitaxial growth; electrical resistivity; indium compounds; iron; secondary ion mass spectra; semiconductor doping; semiconductor growth; 30 Mohmcm; Fe(CO)5 flow rate; InP; SIMS analysis; chemical beam epitaxy; iron incorporation; pentacarbonyliron doping; resistivity; semi-insulating InP; Chemicals; Conductivity; Doping; Epitaxial growth; Indium phosphide; Iron; Molecular beam epitaxial growth; Optical materials; Organic materials; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522106
