DocumentCode
3132880
Title
Dual-Pearson Parameter Extraction for In Tilt Implantation
Author
Shibahara, Kentaro ; Eto, Takanori ; Fukunaga, Tetuya
Author_Institution
Hiroshima Univ., Hiroshima
fYear
2007
fDate
8-9 June 2007
Firstpage
25
Lastpage
26
Abstract
Indium depth profiles were obtained for various energies and tilt angles to provide precise dual Pearson parameter data set. Dual Pearson model can reproduce an In profile with channeling tail. The obtained data set is available with commercial TCAD tools.
Keywords
doping profiles; elemental semiconductors; indium; ion implantation; parameter estimation; semiconductor doping; silicon; In tilt implantation; Si:In - Binary; channeling; doping profiles; dual-Pearson parameter extraction; implantation energy; indium depth profiles; ion implantation; tilt angle; Crystallization; Data mining; Indium; Ion implantation; Nuclear electronics; Parameter extraction; Probability distribution; Semiconductor device modeling; Semiconductor process modeling; Tail;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2007 International Workshop on
Conference_Location
Kyoto
Print_ISBN
1-4244-1103-3
Electronic_ISBN
1-4244-1104-1
Type
conf
DOI
10.1109/IWJT.2007.4279938
Filename
4279938
Link To Document