Title :
Ultra low threshold at room temperature on 1.55μm inas/inp(311)b laser with an active zone based on a single quantum dot layer
Author :
Homeyer, E. ; Piron, R. ; Grillot, F. ; Paranthoen, C. ; Dehaese, O. ; Le Corre, A. ; Tavernier, K. ; Loualiche, S.
Author_Institution :
LENS, INSA-Rennes, Rennes
fDate :
Oct. 29 2006-Nov. 2 2006
Abstract :
For the first time, a laser emission at 1.55 μm telecommunication wavelength is obtained on a single quantum dots (QD) layer laser at room temperature with a threshold current density as low as 320 A/cm2
Keywords :
III-V semiconductors; electroluminescence; indium compounds; laser beams; optical materials; quantum dot lasers; semiconductor quantum dots; 1.55 micron; 293 to 298 K; InAs-InP; QD layer laser; electroluminescence spectra; laser emission; single quantum dot layer laser; threshold current density; Atomic force microscopy; Electroluminescence; Gas lasers; Indium phosphide; Molecular beam epitaxial growth; Quantum dot lasers; Semiconductor lasers; Substrates; Temperature; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9556-5
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.279083
