• DocumentCode
    3132885
  • Title

    Ultra low threshold at room temperature on 1.55μm inas/inp(311)b laser with an active zone based on a single quantum dot layer

  • Author

    Homeyer, E. ; Piron, R. ; Grillot, F. ; Paranthoen, C. ; Dehaese, O. ; Le Corre, A. ; Tavernier, K. ; Loualiche, S.

  • Author_Institution
    LENS, INSA-Rennes, Rennes
  • fYear
    2006
  • fDate
    Oct. 29 2006-Nov. 2 2006
  • Firstpage
    870
  • Lastpage
    871
  • Abstract
    For the first time, a laser emission at 1.55 μm telecommunication wavelength is obtained on a single quantum dots (QD) layer laser at room temperature with a threshold current density as low as 320 A/cm2
  • Keywords
    III-V semiconductors; electroluminescence; indium compounds; laser beams; optical materials; quantum dot lasers; semiconductor quantum dots; 1.55 micron; 293 to 298 K; InAs-InP; QD layer laser; electroluminescence spectra; laser emission; single quantum dot layer laser; threshold current density; Atomic force microscopy; Electroluminescence; Gas lasers; Indium phosphide; Molecular beam epitaxial growth; Quantum dot lasers; Semiconductor lasers; Substrates; Temperature; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
  • Conference_Location
    Montreal, Que.
  • Print_ISBN
    0-7803-9556-5
  • Electronic_ISBN
    0-7803-9555-7
  • Type

    conf

  • DOI
    10.1109/LEOS.2006.279083
  • Filename
    4054463
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3132885