DocumentCode :
3132904
Title :
Behavioral modeling and digital predistortion of Power Amplifiers with memory using Two Hidden Layers Artificial Neural Networks
Author :
Mkadem, Farouk ; Ayed, Morsi B. ; Boumaiza, Slim ; Wood, John ; Aaen, Peter
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
656
Lastpage :
659
Abstract :
This paper presents a novel Two Hidden Layers Artificial Neural Networks (2HLANN) model for behavioral modeling and linearization of RF Power Amplifiers (PAs). Starting with a feedback loop principle model of a PA, an appropriate neural networks structure is deduced. This structure was then optimized to form a real valued and feed-forward 2HLANN based model capable of predicting the nonlinear behavior and the memory effects of wideband PAs. The validation of the proposed model in mimicking the behavior of a Device Under Test (DUT) is carried out in terms of its accuracy in predicting the output spectrum, dynamic AM/AM and AM/PM characteristics and the normalized mean square error. In addition, the 2HLANN model was used to linearize two 250 Watt peak-envelope-power Doherty PAs (DPAs) driven with 20 MHz bandwidth signals. The linearization of these DPAs using the 2HLANN enabled attaining an output power of up to 46.8 dBm and an average efficiency of up to 47.5% coupled with an Adjacent Channel Power Ratio higher than 50 dBc. When compared to a number of previously published behavioral and DPD schemes, the 2HLANN model demonstrated an excellent modeling accuracy and linearization capability.
Keywords :
linearisation techniques; neural nets; power amplifiers; adjacent channel power ratio; artificial neural networks; behavioral modeling; digital predistortion; power amplifiers; Artificial neural networks; Broadband amplifiers; Feedback loop; Feedforward systems; Power amplifiers; Predictive models; Predistortion; Radio frequency; Radiofrequency amplifiers; Wideband; Linearization and behavioral Modeling; Memory Effects; Neural Network; Power Amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5517039
Filename :
5517039
Link To Document :
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