DocumentCode
3132904
Title
Behavioral modeling and digital predistortion of Power Amplifiers with memory using Two Hidden Layers Artificial Neural Networks
Author
Mkadem, Farouk ; Ayed, Morsi B. ; Boumaiza, Slim ; Wood, John ; Aaen, Peter
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
fYear
2010
fDate
23-28 May 2010
Firstpage
656
Lastpage
659
Abstract
This paper presents a novel Two Hidden Layers Artificial Neural Networks (2HLANN) model for behavioral modeling and linearization of RF Power Amplifiers (PAs). Starting with a feedback loop principle model of a PA, an appropriate neural networks structure is deduced. This structure was then optimized to form a real valued and feed-forward 2HLANN based model capable of predicting the nonlinear behavior and the memory effects of wideband PAs. The validation of the proposed model in mimicking the behavior of a Device Under Test (DUT) is carried out in terms of its accuracy in predicting the output spectrum, dynamic AM/AM and AM/PM characteristics and the normalized mean square error. In addition, the 2HLANN model was used to linearize two 250 Watt peak-envelope-power Doherty PAs (DPAs) driven with 20 MHz bandwidth signals. The linearization of these DPAs using the 2HLANN enabled attaining an output power of up to 46.8 dBm and an average efficiency of up to 47.5% coupled with an Adjacent Channel Power Ratio higher than 50 dBc. When compared to a number of previously published behavioral and DPD schemes, the 2HLANN model demonstrated an excellent modeling accuracy and linearization capability.
Keywords
linearisation techniques; neural nets; power amplifiers; adjacent channel power ratio; artificial neural networks; behavioral modeling; digital predistortion; power amplifiers; Artificial neural networks; Broadband amplifiers; Feedback loop; Feedforward systems; Power amplifiers; Predictive models; Predistortion; Radio frequency; Radiofrequency amplifiers; Wideband; Linearization and behavioral Modeling; Memory Effects; Neural Network; Power Amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5517039
Filename
5517039
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