Title :
A unified small signal model and an efficient parameter extraction technique for deep submicron MOSFETs for RF applications
Author :
Ng, Tze Cheng ; Swe, Toe Naing ; Yeo, Kiat Seng ; Chew, Kok Wai ; Ma, Jianguo ; Do, Manh Anh
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
Abstract :
A new small signal model for deep submicron MOSFETs is presented. It is a unified model suitable for both baseband and RF simulation, and valid in both the triode and saturation regions. The model is implemented as a macro model with parasitic elements added to the BSIM3v3 core. The model extraction methodology is analogous to the “divide and conquer” strategy used in computer science. This approach is superior to the traditional method of optimizing the entire model to fit the measured S-parameters. It has shown an increase in accuracy and optimization speed while reducing convergence problems caused by global optimization. Excellent agreement between measured and simulated S-parameters at different biasing conditions in the range from 50 MHz to 15 GHz has been obtained
Keywords :
MOSFET; S-parameters; UHF field effect transistors; convergence; microwave field effect transistors; optimisation; semiconductor device models; 50 MHz to 15 GHz; BSIM3v3 core; RF applications; RF simulation; S-parameters; baseband simulation; biasing conditions; convergence problems reduction; deep submicron MOSFETs; macro model; model extraction methodology; optimization speed; parameter extraction technique; parasitic elements; saturation region; triode region; unified small signal model; Computational modeling; Computer science; Data mining; Integrated circuit modeling; MOSFETs; Optimization methods; Parameter extraction; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925738
