Latest Advances In Ion Implantation & Annealing For Gate And Channel (USJ) Doping Optimization

High current implanters are now all single wafer but they all have a unique, correctable, dopant micro-variation signature that can only be detected and monitored with 0.1mm pitch spatial resolution. The various advanced millisecond annealing equipment also have their unique micro and macro annealing variation signatures that can either add to or hide the implant dopant variations so new metrology techniques with 0.1mm step resolution is needed. Medium current implanters have extended their upper energy range to 900keV and lower energy range to 500eV. For high tilt implantation such as the multiple HALO implant, precision requires constant focal length and therefore iso-centric scanning motion and higher mass dopant species implants to achieve retrograde and dopant free channels with diffusion-less annealing techniques.