DocumentCode
3132960
Title
Determination of Activated Dopant Profiles with a Novel FastGate® Probe
Author
Hillard, Robert J. ; Ye, C.Win ; Benjamin, Mark C. ; Suguro, Kyoichi
Author_Institution
Solid State Meas. Inc., Pittsburgh
fYear
2007
fDate
8-9 June 2007
Firstpage
47
Lastpage
48
Abstract
A novel technique has been developed that can provide activated dopant profiling of USJ structures without complicated Poisson based corrections. The technique has been demonstrated on USJ layers as thin as 25 nm. The value of this measurement technique is that it removes any consideration of mobility variation and allows one to focus on the electrically activated dopant. As the shape of the profile can affect device performance, this measurement will allow for optimal process development.
Keywords
doping profiles; probes; semiconductor junctions; FastGate probe; USJ structures; activated dopant profiles; electrically activated dopant; mobility variation; optimal process development; size 25 nm; source-drain extensions; ultra-shallow junctions; Annealing; Capacitance-voltage characteristics; Charge carrier density; Contacts; Electrical resistance measurement; MOSFETs; Probes; Shape; Solid state circuits; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2007 International Workshop on
Conference_Location
Kyoto
Print_ISBN
1-4244-1103-3
Electronic_ISBN
1-4244-1104-1
Type
conf
DOI
10.1109/IWJT.2007.4279943
Filename
4279943
Link To Document