DocumentCode
3132982
Title
Island growth and phase separation in strained InAs1-xP x/InP heterostructures
Author
Tweet, D.J. ; Matsuhata, H. ; Shioda, R. ; Oyanagi, H. ; Kamei, H.
Author_Institution
Electrotech. Lab., Ibaraki, Japan
fYear
1995
fDate
9-13 May 1995
Firstpage
206
Lastpage
209
Abstract
Using x-ray diffraction and transmission electron microscopy we have found that InAs1-xPx films deposited on InP(001) substrates with organometallic vapor phase epitaxy grow in an unusual phase-separated island growth mode related to strain. Initially, pseudomorphic islands of intermediate composition form and grow only until some point in the relaxation process, possibly a critical value of the strain, after which islands of the intended composition begin to appear. Furthermore, both types of islands are found to penetrate deeply into the substrate
Keywords
III-V semiconductors; X-ray diffraction; indium compounds; interface structure; segregation; semiconductor growth; semiconductor heterojunctions; surface phase transformations; surface structure; transmission electron microscopy; vapour phase epitaxial growth; InAs1-xPx films; InAsP-InP; InP(001) substrates; TEM; XRD; intermediate composition; island growth; organometallic vapor phase epitaxy; phase separation; phase-separated island growth mode; pseudomorphic islands; relaxation process; strain; strained InAs1-xPx/InP heterostructures; transmission electron microscopy; x-ray diffraction; Atomic layer deposition; Capacitive sensors; Epitaxial growth; Indium phosphide; Laboratories; Molecular beam epitaxial growth; Substrates; Transmission electron microscopy; X-ray diffraction; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location
Hokkaido
Print_ISBN
0-7803-2147-2
Type
conf
DOI
10.1109/ICIPRM.1995.522115
Filename
522115
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