DC and microwave performance of pseudomorphic modulation doped field effect transistor (AlGaAs/InGaAs) for millimeter wave and high speed digital IC applications

Author

Agrawal, Anju ; Goswami, Anisha ; Gupta, R.S.

Author_Institution

Dept. of Electron. Sci., Delhi Univ., India

fYear

2000

fDate

2000

Firstpage

144

Lastpage

148

Abstract

The results of an analysis based on the solution of 2-D Poisson´s equation are presented to investigate the dependence of the small signal parameters on biasing conditions. A maximum frequency of 101.42 GHz at 0.25 μm is obtained and the results show close agreement with the experimental data thereby proving the validity of the proposed model

Keywords

III-V semiconductors; Poisson equation; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; 0.25 micron; 101.42 GHz; AlGaAs-InGaAs; AlGaAs/InGaAs pseudomorphic MODFET; DC characteristics; Poisson equation; high-speed digital IC; microwave characteristics; millimeter-wave IC; small-signal parameters; two-dimensional analytical model; Analytical models; Digital circuits; Epitaxial layers; Frequency; Indium gallium arsenide; Microwave FETs; Microwave devices; Millimeter wave circuits; Millimeter wave transistors; Poisson equations;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.925742

Filename

925742