Cluster Ion Implantation - Prospects and Challenges-

More than ten years have passed since cluster ion implantation was proposed by Kyoto University. Cluster ion implanters equipped with a specially designed ion source are announced for device manufacturing. This technique is now a candidate for ultra shallow junction formation in the ITRS road map. It is essential to understand the atomistic mechanism of cluster implantation, because the behavior of damaged atoms during annealing is a very important topic for high-quality shallow junction formation. The damage induced with cluster ions is presented.