Lateral modulation in strain-compensated MQW structures

Author

Shimose, Y. ; Kikugawa, T. ; Nagai, Arid H.

Author_Institution

Res. Lab., Anritsu Corp., Kanagawa, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

210

Lastpage

212

Abstract

Strain-compensated multiple-quantum-well structures in InGaAsP alloys have been grown by metal-organic vapor-phase epitaxy (MOVPE). Remarkably-periodic lateral-modulated structures have been observed, and their modulation properties are discussed. The modulated structures are enhanced at the InP-rich region and under huge net strain. The modulation period depends on the growth rate

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; interface structure; internal stresses; semiconductor growth; semiconductor quantum wells; semiconductor superlattices; vapour phase epitaxial growth; InGaAsP; InGaAsP alloys; InP-rich region; MOVPE; growth rate; lateral modulation; metal-organic vapor-phase epitaxy; modulation period; modulation properties; periodic lateral-modulated structures; strain-compensated MQW structures; strain-compensated multiple-quantum-well structures; Ash; Capacitive sensors; Epitaxial growth; Epitaxial layers; Indium phosphide; Lattices; Luminescence; Photoluminescence; Photonic band gap; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522116

Filename

522116