Title :
Lateral modulation in strain-compensated MQW structures
Author :
Shimose, Y. ; Kikugawa, T. ; Nagai, Arid H.
Author_Institution :
Res. Lab., Anritsu Corp., Kanagawa, Japan
Abstract :
Strain-compensated multiple-quantum-well structures in InGaAsP alloys have been grown by metal-organic vapor-phase epitaxy (MOVPE). Remarkably-periodic lateral-modulated structures have been observed, and their modulation properties are discussed. The modulated structures are enhanced at the InP-rich region and under huge net strain. The modulation period depends on the growth rate
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; interface structure; internal stresses; semiconductor growth; semiconductor quantum wells; semiconductor superlattices; vapour phase epitaxial growth; InGaAsP; InGaAsP alloys; InP-rich region; MOVPE; growth rate; lateral modulation; metal-organic vapor-phase epitaxy; modulation period; modulation properties; periodic lateral-modulated structures; strain-compensated MQW structures; strain-compensated multiple-quantum-well structures; Ash; Capacitive sensors; Epitaxial growth; Epitaxial layers; Indium phosphide; Lattices; Luminescence; Photoluminescence; Photonic band gap; Quantum well devices;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522116
