Influence of strain on exciton lifetime in AlGaInP/GaInP quantum wells

Author

Domen, K. ; Kondo, M. ; Tanahashi, T.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

213

Lastpage

216

Abstract

We investigated the influence of strain on the exciton lifetime in AlGaInP/GaInP quantum wells grown by metalorganic vapor phase epitaxy. We found that exciton lifetime becomes shorter under compressive strain and longer under tensile strain. We found a strong correlation between the lifetime and the interfacial recombination velocity of the samples. We propose that the degradation in interface quality decreases the area of coherence of the exciton, increasing the lifetime, as the strain moves from compressive to tensile

Keywords

III-V semiconductors; aluminium compounds; electron-hole recombination; excitons; gallium compounds; indium compounds; interface states; photoluminescence; piezo-optical effects; radiative lifetimes; semiconductor growth; semiconductor quantum wells; surface recombination; time resolved spectra; vapour phase epitaxial growth; AlGaInP-GaInP; AlGaInP/GaInP quantum wells; coherence; compressive strain; exciton lifetime; interface quality; interfacial recombination velocity; metalorganic vapor phase epitaxy; radiative lifetime; strain; tensile strain; time resolved photoluminescence; Capacitive sensors; Epitaxial growth; Excitons; Gallium arsenide; Laser excitation; Radiative recombination; Strain measurement; Substrates; Temperature; Tensile strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522117

Filename

522117