Sub-30-nm PMOSFET using Gas Cluster Ion Beam Boron Doping for 45-nm node CMOS and beyond

Author

Kitazawa, M. ; Togawa, M. ; Rosser, D. ; Yamashita, T. ; Oda, H. ; Inoue, Y. ; Kawasaki, Y. ; Iwamatsu, T.

Author_Institution

Renesas Technol. Corp., Hyogo

fYear

2007

fDate

8-9 June 2007

Firstpage

61

Lastpage

62

Abstract

Formation of ultra shallow junctions (USJ) with sufficiently low resistance in the source/drain extension (SDE) region is necessary for MOSFETs at the 45-nm node and beyond. Several doping technologies, such as plamsa doping, cluster ion implantation and gas cluster ion beam (GCIB) doping have been studied as possible replacements for conventional sub-keV ion implantation. In this work we used GCIB boron doping to form the SDE and have demonstrated the importance of controlling the removal process of photo resist (PR). Additionally to previous work, advantages of GCIB doping with an optimized fabrication process compared to low energy ion implantation are reported.

Keywords

CMOS integrated circuits; MOSFET; boron; ion implantation; nanoelectronics; photoresists; semiconductor doping; silicon; CMOS; PMOSFET; Si:B; gas cluster ion beam boron doping; low energy ion implantation; photoresist; size 45 nm; source/drain extension; ultra shallow junctions; Boron; CMOS process; CMOS technology; Doping; Electrodes; Fabrication; Ion beams; Ion implantation; MOSFET circuits; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2007 International Workshop on

Conference_Location

Kyoto

Print_ISBN

1-4244-1103-3

Electronic_ISBN

1-4244-1104-1

Type

conf

DOI

10.1109/IWJT.2007.4279947

Filename

4279947