Title :
Interconnection microvia drilling using solid state UV laser
Author :
Tan, Bo ; Venkatakrishnan, Krishnan
Author_Institution :
Dept. of Aerosp. Eng., Ryerson Univ., Toronto, Ont.
Abstract :
In this work we conducted an in-depth investigation of UV laser drilling of interconnection microvias with a commercially available Q-switched, diode-pumped, solid-state industrial UV. It delivers 355-nm, 40 ns laser pulses. The tested sample was a polished silicon substrate of 250mum thickness and crystal orientation of (111). The effects of laser parameters, like pulse energy, repetition rate and polarization, were studied
Keywords :
Q-switching; laser beam machining; laser beams; silicon; solid lasers; 250 micron; 355 nm; 40 ns; Q-switched laser; Si; crystal orientation; diode-pumping; interconnection microvia drilling; laser parameter; laser pulse energy; polarization; polished silicon substrate; solid state UV laser drilling; Chip scale packaging; Diodes; Drilling; Laser beams; Machining; Optical polarization; Optical pulses; Solid lasers; Solid state circuits; Wafer scale integration;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.279110
