• DocumentCode
    3133049
  • Title

    CMOS active inductors for L band

  • Author

    Mascarenhas, Guilherme ; Caldinhas Vaz, J. ; Costa Freire, J.

  • Author_Institution
    Inst. de Telecomunicacoes, Inst. Superior Tecnico, Lisbon, Portugal
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    157
  • Lastpage
    160
  • Abstract
    The implementation of CMOS active inductors at 2 GHz is described. The circuit is based on the gyrators theory. Theoretical expressions are derived with an enough accurate MOSFET model. With 0.6 μm CMOS standard technology is possible to obtain up to a few tenth of nanohenry inductance with a Q close to 10 at 2 GHz. A MMIC was designed and the first results confirm the theoretical predictions
  • Keywords
    CMOS integrated circuits; Q-factor; field effect MMIC; gyrators; inductors; 0.6 micron; 2 GHz; CMOS active inductor; L-band; MMIC; MOSFET model; Q-factor; gyrator circuit; inductance; Active inductors; CMOS technology; Costs; Dynamic range; FETs; Gallium arsenide; Gyrators; MMICs; MOSFET circuits; Spirals;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2000 Asia-Pacific
  • Conference_Location
    Sydney, NSW
  • Print_ISBN
    0-7803-6435-X
  • Type

    conf

  • DOI
    10.1109/APMC.2000.925747
  • Filename
    925747
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3133049