• DocumentCode
    3133061
  • Title

    Arsenic Diffusion in strained Si/relaxed Si1-xGex and its electrical characteristics

  • Author

    Sumitomo, Takamichi ; Matsumoto, Satoru

  • Author_Institution
    Keio Univ., Yokohama
  • fYear
    2007
  • fDate
    8-9 June 2007
  • Firstpage
    65
  • Lastpage
    66
  • Abstract
    In this work, the authors investigated arsenic diffusion in s-Si/Si1-xGex with the use of thermal diffusion method in order to avoid the crystal damage due to ion-implantation and tried to clarify the Ge chemical effect and strain effect on dopant diffusion. We also studied electrical characteristics in As-diffused s-Si/Si1-xGex heterostructures.
  • Keywords
    CVD coatings; Ge-Si alloys; arsenic; electron mobility; elemental semiconductors; ion implantation; semiconductor heterojunctions; semiconductor materials; silicon; thermal diffusion; Si-SiGe:As; arsenic diffusion; crystal damage; dopant diffusion; electrical characteristics; ion implantation; low pressure chemical vapour deposition; strain effect; thermal diffusion; Capacitive sensors; Chemicals; Electric variables; Germanium silicon alloys; MOSFET circuits; Rough surfaces; Silicon germanium; Solids; Surface roughness; Tensile strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2007 International Workshop on
  • Conference_Location
    Kyoto
  • Print_ISBN
    1-4244-1103-3
  • Electronic_ISBN
    1-4244-1104-1
  • Type

    conf

  • DOI
    10.1109/IWJT.2007.4279949
  • Filename
    4279949
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3133061