DocumentCode
3133083
Title
Chemical Structure of InP Surface in MOVPE Studied by Surface Photo-Absorption
Author
Kobayashi, Yasuyuki ; Kobayashi, Naoki
fYear
1995
fDate
9-13 May 1995
Firstpage
225
Keywords
Bonding; Chemicals; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical surface waves; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Print_ISBN
0-7803-2147-2
Type
conf
DOI
10.1109/ICIPRM.1995.522120
Filename
522120
Link To Document