Improving Junction Uniformity and Quality with Optimized Diffusion-less Annealing

Author

Borland, John ; Ootsuka, Fumio ; Aoyama, Takayuki ; Onizawa, Takashi ; Buczkowski, Andrzej

Author_Institution

J.O.B. Technol., Aiea

fYear

2007

fDate

8-9 June 2007

Firstpage

69

Lastpage

72

Abstract

Comparisons between B, Ge+B and B₁₈H₂₂ implantations for pSDE were made. With Flash only the localized individual Xe-lamps signature was clearly detected by PLi and Rs measurements. Adding a spike first RTA anneal dramatically improved the global and local micro uniformity variation by 2-3x with either a 1000degC or 900degC spike 1st anneal. The highest quality B junctions were achieved with B₁₈H₂₂ for all annealing conditions as verified by PLi value and junction leakage current.

Keywords

arsenic; boron; boron compounds; elemental semiconductors; germanium; ion implantation; leakage currents; rapid thermal annealing; semiconductor junctions; silicon; RTA; Si:As - Interface; Si:B - Interface; Si:Ge,B - Interface; Xe-lamp annealing; diffusion-less annealing; junction leakage current; junction uniformity; temperature 1000 degC; temperature 900 degC; Annealing; Electrical resistance measurement; Laser beams; Metals industry; Pollution measurement; Probes; Strontium; Surface contamination; Temperature dependence; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2007 International Workshop on

Conference_Location

Kyoto

Print_ISBN

1-4244-1103-3

Electronic_ISBN

1-4244-1104-1

Type

conf

DOI

10.1109/IWJT.2007.4279951

Filename

4279951