DocumentCode
3133102
Title
The effects of gate resistance on the performances of CMOS RF circuits
Author
Kao, Yao-Huang ; Chuang, Chao-hsi ; Lin, Tser-Yu
Author_Institution
Inst. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2000
fDate
2000
Firstpage
169
Lastpage
172
Abstract
The BSIM3v3 model with gate resistance taken into account is employed to test the RF performances of CMOS circuits. Two circuits of a 2.4 GHz LNA and mixer fabricated by a 0.5 μm CMOS process are examined. A good agreement is obtained
Keywords
CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; UHF mixers; electric resistance; integrated circuit modelling; semiconductor device models; 0.5 micron; 2.4 GHz; BSIM3v3 model; CMOS RF circuits; LNA; gate resistance; low-noise amplifier; mixer; CMOS process; Chaotic communication; Circuit testing; Conductivity; Frequency response; Performance evaluation; Radio frequency; Roentgenium; Scattering parameters; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000 Asia-Pacific
Conference_Location
Sydney, NSW
Print_ISBN
0-7803-6435-X
Type
conf
DOI
10.1109/APMC.2000.925752
Filename
925752
Link To Document