Title :
Metal-Germanide Schottky Source/Drain Transistor with High-k/Metal Gate Stack on Ge and Si0.05Ge0.95/Si Substrate
Author :
Gao, Fei ; Li, Rui ; Chi, D.Z. ; Balakumar, S. ; Lee, S.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
Systematic studies on Schottky S/D metal-germanide for both Ge PMOSFET (Ni & Pt) and NMOSFET (Er) application are reported. Thermal emission model-based barrier height measurement shows that hole barrier heights for PtGe2/n-Ge (100) and NiGe/n-Ge (100) are extracted as low as Phih~0 eV and ~0.06 eV, respectively, and electron barrier height, Phie~0.12 eV for Er3Ge4/p-Ge (100) contact. Ni- & Pt-germanide Schottky S/D PMOSFETs on Si0.05Ge0.95/Si substrate with HfO2/TaN gate stack are demonstrated with 80%~85% hole mobility enhancement against the universal mobility of Si. However, significantly low drive current was observed for Er-germanides Schottky S/D NMOSFET.
Keywords :
Ge-Si alloys; MOSFET; Schottky gate field effect transistors; elemental semiconductors; erbium compounds; hole mobility; nickel compounds; platinum compounds; semiconductor device models; silicon; silicon compounds; Er3Ge4; Ge; Ge PMOSFET; HfO2-TaN; NMOSFET; NiGe; PtGe2; Schottky S/D PMOSFET; Si0.05Ge0.95-Si; barrier height measurement; electron barrier height; high-k/metal gate stack; hole mobility enhancement; metal-germanide Schottky source/drain transistor; thermal emission model; Dielectric substrates; Erbium; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Inorganic materials; MOSFET circuits; Passivation; Silicon; Solids;
Conference_Titel :
Junction Technology, 2007 International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-1103-3
Electronic_ISBN :
1-4244-1104-1
DOI :
10.1109/IWJT.2007.4279953
