DocumentCode
3133147
Title
Impact of Pt Incorporation on Thermal Stability of NiGe Layers on Ge(001) Substrates
Author
Nakatsuka, Osamu ; Suzuki, Atsushi ; Sakai, Akira ; Ogawa, Masaki ; Zaima, Shigeaki
Author_Institution
Nagoya Univ., Nagoya
fYear
2007
fDate
8-9 June 2007
Firstpage
87
Lastpage
88
Abstract
In this study, the authors attempted to improve the thermal stability of NiGe layers on Ge substrates by the incorporation of Pt into Ni/Ge systems. The crystalline and electrical properties of NiGe layers with and without Pt incorporation were investigated.
Keywords
MOSFET; electrical contacts; germanium compounds; nickel compounds; platinum; semiconductor-metal boundaries; thermal stability; Ge; Ge(001); MOSFET; Ni-Ge; NiGe; Pt; crystalline properties; electrical contacts; metal-oxide-semiconductor field effect transistors; thermal stability; Annealing; Conductivity; Crystallization; Integrated circuit technology; MOSFET circuits; Materials science and technology; Robustness; Scanning electron microscopy; Temperature distribution; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2007 International Workshop on
Conference_Location
Kyoto
Print_ISBN
1-4244-1103-3
Electronic_ISBN
1-4244-1104-1
Type
conf
DOI
10.1109/IWJT.2007.4279955
Filename
4279955
Link To Document