A 1.2-volt operation power PHEMT for personal handy phone handset application

Author

Chang, E.Y. ; Lee, Di-Houng ; Chen, S.H.

Author_Institution

Dept. of Mater. Sci., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2000

fDate

2000

Firstpage

185

Lastpage

188

Abstract

A high efficiency and high linearity 1.2 V operational AlGaAs-InGaAs-GaAs pseudomorphic high electron mobility transistor (PHEMT) for digital wireless personal handy phone (PHS) handset application has been developed. The device exhibits maximum power added efficiency (PAE) of 43.62% at 1.2 V drain bias. Under 1.9 GHz/4-shifted QPSK modulated PHS signal, the device shows an output power of 22.02 dBm with linear efficiency of 37% and adjacent channel leakage power (ACP) of -56.86 dBc at 600 kHz apart from the center frequency. The device developed shows excellent performance at 1.2 V operation and can be used for low voltage PHS handset application

Keywords

III-V semiconductors; UHF field effect transistors; aluminium compounds; digital radio; gallium arsenide; indium compounds; land mobile radio; low-power electronics; personal communication networks; power HEMT; quadrature phase shift keying; radiotelephony; telephone sets; 1.2 V; 1.9 GHz; 37 percent; 4-shifted QPSK modulated PHS signal; 43.62 percent; AlGaAs-InGaAs-GaAs; LV PHS handset application; digital wireless PHS handset application; high efficiency device; high electron mobility transistor; high linearity device; low voltage application; personal handy phone handset; power PHEMT; pseudomorphic HEMT; Chirp modulation; Electron mobility; HEMTs; Linearity; Low voltage; MODFETs; PHEMTs; Power generation; Quadrature phase shift keying; Telephone sets;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.925757

Filename

925757