Distribution of As atoms in InP/InPAs(1 ML)/InP hetero-structures measured by X-ray CTR scattering

Author

Tabuchi, M. ; Fujibayashi, K. ; Yamada, N. ; Takeda, Y. ; Takahashi, I. ; Harada, J.

Author_Institution

Dept. of Mater. Sci. & Eng., Nagoya Univ., Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

237

Lastpage

240

Abstract

Samples of InP/InPAs(1ML)/InP were prepared by OMVPE. The interfaces of these samples were investigated by X-ray CTR measurement. The distributions of As atoms around the interfaces were clearly revealed in the atomic scale from the data. It was shown that As atoms extended into only a few MLs under the InPAs. As atoms contained in the InPAs hetero-layer were almost the same as those extended in the InP cap layer. These results suggest that the extension of As atoms in the InP layer occurs due to the absorbed As atoms on the InPAs surface or As atoms remaining in the gas phase. Thus the source-gas flow sequence should be finely controlled to realize abrupt InP/InPAs interfaces

Keywords

III-V semiconductors; X-ray diffraction; adsorption; chemical interdiffusion; indium compounds; interface structure; monolayers; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; As atom distribution; InP; InP cap layer; InP/InPAs/InP hetero-structures; OMVPE; X-ray CTR scattering; abrupt InP/InPAs interfaces; absorbed As atoms; atomic scale; gas phase; interfaces; monolayers; source-gas flow sequence; Atomic layer deposition; Atomic measurements; Data analysis; Indium phosphide; Particle scattering; Quantum wells; Shape; X-ray diffraction; X-ray imaging; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522123

Filename

522123