Ge/SiGe Quantum-confined Stark modulators on silicon

Author

Harris, James S.

Author_Institution

Solid State & Photonics Lab., Stanford Univ., Palo Alto, CA

fYear

2006

fDate

Oct. 2006

Firstpage

903

Lastpage

904

Abstract

In this paper, we describe the development of efficient quantum-confined Stark effect in type-I strain-balanced Ge/SiGe multi-quantum-wells (MQWs) on relaxed SiGe-on-Si. The Ge/SiGe QCSE described here with high absorption coefficient, high contrast ratio, low power dissipation and ultra-high speed operation will enable integration of efficient silicon-based Ge electro-absorption modulators with a standard CMOS fabrication process, leading to high-density, high-speed on-chip photonic interconnects

Keywords

absorption coefficients; electro-optical modulation; elemental semiconductors; germanium; germanium alloys; integrated optics; optical interconnections; optical materials; quantum confined Stark effect; semiconductor quantum wells; silicon alloys; Ge-SiGe; Si; absorption coefficient; contrast ratio; electro-absorption modulators; high-speed on-chip photonic interconnects; power dissipation; quantum-confined Stark effect; quantum-confined Stark modulator; standard CMOS fabrication process; type-I strain-balanced multiquantum-well; Absorption; CMOS process; Electrons; Excitons; Germanium silicon alloys; Optical buffering; Optical modulation; Optical transmitters; Photonic band gap; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE

Conference_Location

Montreal, Que.

Print_ISBN

0-7803-9555-7

Electronic_ISBN

0-7803-9555-7

Type

conf

DOI

10.1109/LEOS.2006.279118

Filename

4054480