Title :
Requirements of the Low Energy Boron Halo Implantation for the Next Generation of LOP/LSTP Devices
Author :
Fuse, Genshu ; Sano, Makoto ; Koike, Masazumi ; Ito, Masaki ; Sato, Fumiaki ; Sugitani, Michiro
Author_Institution :
SEN Corp., Ehime
Abstract :
The capability of a medium current implanter, the MC3, has been evaluated for low energy halo implantations. 1. Uniformity within a wafer is good even at 3keV, 60-degree tilt angle. 2. Uniform channeling profiles are observed within a 300- mm wafer. 3. The vertical and horizontal beam divergence angles are about plusmn0.2 degree even for low energy boron beams. 4. Parallelism is under 0.15 degree at low energy boron. The data suggest that the MC3 can be also used for the next generation halo implantation.
Keywords :
CMOS logic circuits; boron; ion implantation; low-power electronics; CMOs logic devices; LOP/LSTP devices; MC3; beam divergence angles; boron halo implantation; channeling profiles; low energy boron halo implantation; low operation power devices; low standby power devices; medium current implanter; Atomic measurements; Boron; Degradation; Electrical resistance measurement; Fluctuations; Implants; MOSFETs; Magnetic separation; Space charge; Threshold voltage;
Conference_Titel :
Junction Technology, 2007 International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-1103-3
Electronic_ISBN :
1-4244-1104-1
DOI :
10.1109/IWJT.2007.4279963
