DocumentCode
3133300
Title
Requirements of the Low Energy Boron Halo Implantation for the Next Generation of LOP/LSTP Devices
Author
Fuse, Genshu ; Sano, Makoto ; Koike, Masazumi ; Ito, Masaki ; Sato, Fumiaki ; Sugitani, Michiro
Author_Institution
SEN Corp., Ehime
fYear
2007
fDate
8-9 June 2007
Firstpage
121
Lastpage
124
Abstract
The capability of a medium current implanter, the MC3, has been evaluated for low energy halo implantations. 1. Uniformity within a wafer is good even at 3keV, 60-degree tilt angle. 2. Uniform channeling profiles are observed within a 300- mm wafer. 3. The vertical and horizontal beam divergence angles are about plusmn0.2 degree even for low energy boron beams. 4. Parallelism is under 0.15 degree at low energy boron. The data suggest that the MC3 can be also used for the next generation halo implantation.
Keywords
CMOS logic circuits; boron; ion implantation; low-power electronics; CMOs logic devices; LOP/LSTP devices; MC3; beam divergence angles; boron halo implantation; channeling profiles; low energy boron halo implantation; low operation power devices; low standby power devices; medium current implanter; Atomic measurements; Boron; Degradation; Electrical resistance measurement; Fluctuations; Implants; MOSFETs; Magnetic separation; Space charge; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2007 International Workshop on
Conference_Location
Kyoto
Print_ISBN
1-4244-1103-3
Electronic_ISBN
1-4244-1104-1
Type
conf
DOI
10.1109/IWJT.2007.4279963
Filename
4279963
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