DocumentCode
3133315
Title
Development of Nissin new boron cluster ion implanter
Author
Hamamoto, Nariaki ; Umisedo, Sei ; Koga, Yuji ; Matsumoto, Takao ; Nagayama, Tsutomu ; Tanjyo, Masayasu ; Nagai, Nobuo ; Horsky, Tom ; Jacobson, Dale ; Glavish, Hilton
Author_Institution
Nissin Ion Equip. Co. Ltd, Kyoto
fYear
2007
fDate
8-9 June 2007
Firstpage
125
Lastpage
126
Abstract
New boron cluster ion implanter is being developed with using alpha-type equipment. High through-put at ultra low energy region in drift mode with good implantation qualities is confirmed and presented. We continue to develop this cluster ion implantation technology for mass production.
Keywords
boron; ion implantation; semiconductor device manufacture; Nissin; alpha type equipment; boron cluster ion implanter; drift mode; electron volt energy 0.2 keV to 3 keV; mass production; Apertures; Boron; Commercialization; Implants; Ion implantation; Ion sources; Jacobian matrices; Magnetic semiconductors; Pollution measurement; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2007 International Workshop on
Conference_Location
Kyoto
Print_ISBN
1-4244-1103-3
Electronic_ISBN
1-4244-1104-1
Type
conf
DOI
10.1109/IWJT.2007.4279964
Filename
4279964
Link To Document