Title :
Development of Nissin new boron cluster ion implanter
Author :
Hamamoto, Nariaki ; Umisedo, Sei ; Koga, Yuji ; Matsumoto, Takao ; Nagayama, Tsutomu ; Tanjyo, Masayasu ; Nagai, Nobuo ; Horsky, Tom ; Jacobson, Dale ; Glavish, Hilton
Author_Institution :
Nissin Ion Equip. Co. Ltd, Kyoto
Abstract :
New boron cluster ion implanter is being developed with using alpha-type equipment. High through-put at ultra low energy region in drift mode with good implantation qualities is confirmed and presented. We continue to develop this cluster ion implantation technology for mass production.
Keywords :
boron; ion implantation; semiconductor device manufacture; Nissin; alpha type equipment; boron cluster ion implanter; drift mode; electron volt energy 0.2 keV to 3 keV; mass production; Apertures; Boron; Commercialization; Implants; Ion implantation; Ion sources; Jacobian matrices; Magnetic semiconductors; Pollution measurement; Semiconductor devices;
Conference_Titel :
Junction Technology, 2007 International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-1103-3
Electronic_ISBN :
1-4244-1104-1
DOI :
10.1109/IWJT.2007.4279964
