Title :
Selective MOCVD growth of InP around dry-etched mesas with various patterns for photonic integrated circuits
Author :
Goto, K. ; Takemi, M. ; Miura, T. ; Takemoto, A. ; Mihashi, Y. ; Takamiya, S.
Author_Institution :
Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
In this paper we have investigated the selective growth of a pnp-InP layer structure as well as the mass-transport effect around dry-etched mesas with various crystallographic directions of stripes. The behavior is found to depend remarkably on the stripe direction. The selective embedding growth around waveguide patterns, such as bifurcations or crossings, is also investigated
Keywords :
III-V semiconductors; bifurcation; indium compounds; integrated optics; integrated optoelectronics; optical waveguides; semiconductor growth; sputter etching; vapour phase epitaxial growth; InP; bifurcations; crossings; crystallographic directions; dry-etched mesas; mass-transport effect; photonic integrated circuits; pnp-InP layer; selective MOCVD growth; selective embedding growth; selective growth; stripes; waveguide patterns; Bifurcation; Crystallography; Dry etching; Indium phosphide; Laboratories; MOCVD; Microwave devices; Microwave theory and techniques; Photonic integrated circuits; Shape;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522133
