Title :
Novel Junction Engineering Scheme Using Combination of LSA and Spike-RTA
Author :
Endo, S. ; Maruyama, Y. ; Kawasaki, Y. ; Yamashita, T. ; Oda, H. ; Inoue, Y.
Author_Institution :
Renesas Technol. Corp., Hyogo
Abstract :
A novel junction engineering scheme using the combination of LSA and spike-RTA is demonstrated. Xj-Rs tradeoffs of BF2-SDE are investigated for several combinations of spike-RTA and LSA, and it is demonstrated that LSA-first process is effective for the control of the gate-SDE overlap with shallow and low-resistance SDE. This is because dopant impurities are highly activated first by LSA and diffuse by following spike-RTA keeping high-activation. This technology is promising for 45-nm node CMOS and beyond.
Keywords :
MOSFET; laser beam annealing; rapid thermal annealing; LSA; MOSFET; angled implantation; junction engineering; laser spike annealing; metal-oxide-semiconductor field effect transistors; rapid thermal annealing; source/drain-extension; spike-RTA; Acceleration; Annealing; Boron; Impurities; Lamps; Leakage current; MOSFETs; Power lasers; Temperature; Thermal degradation;
Conference_Titel :
Junction Technology, 2007 International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-1103-3
Electronic_ISBN :
1-4244-1104-1
DOI :
10.1109/IWJT.2007.4279967
