InP-based Narrow Band Photodetector Modules for 40 to 100 GHz Linear High Power Applications

Author

Bach, H.-G. ; Mekonnen, G.G. ; Beling, A.

Author_Institution

Heinrich-Hertz-Inst., Fraunhofer Inst. for Telecommun., Berlin

fYear

2006

fDate

Oct. 2006

Firstpage

925

Lastpage

926

Abstract

InP-based narrowband photodetectors designed for 40, 60, 80, 85, 90, and 100 GHz resonance frequencies were fabricated and packaged. Main applications are clock recovery in fibre based high-speed transmission systems or O/E converters in mm-wave links. Gain values of up to 7 dB are measured. Responsivity peaks at 1 A/W at 40 GHz. Resonance frequency tuning is achieved by using reverse biases of 2 to 12 V

Keywords

III-V semiconductors; electro-optical devices; indium compounds; microwave photonics; optical communication equipment; optical design techniques; optical fabrication; optical fibre communication; optical tuning; photodetectors; synchronisation; 2 to 12 V; 40 to 100 GHz; InP; clock recovery; electro-optical converters; fibre based high-speed transmission systems; gain values; linear high power applications; mm-wave links; narrowband photodetector modules design; photodetector fabrication; resonance frequency tuning; reverse biases; Coplanar waveguides; Detectors; Impedance; Narrowband; Optical waveguides; Packaging; Photodetectors; Photodiodes; Resonance; Resonant frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE

Conference_Location

Montreal, Que.

Print_ISBN

0-7803-9555-7

Electronic_ISBN

0-7803-9555-7

Type

conf

DOI

10.1109/LEOS.2006.279149

Filename

4054491