Title :
Reducing random-dopant fluctuation impact on core-speed and power variability in many-core platforms
Author :
Majzoub, Sohaib ; Alars, Zaid ; Hamdioui, Said
Author_Institution :
King Saud Univ., Riyadh, Saudi Arabia
Abstract :
In this paper, we propose a novel technique that uses multi-Vt design to reduce the impact of random process variation on delay and power in a many-core platform. Random variation is mostly attributed to the random-dopant fluctuation. The proposed technique reduces this fluctuation by lowering the dopant density and then compensating the threshold voltage using a footer transistor. The results show a reduction of the total standard deviation from 25% down to 17% using the proposed method.
Keywords :
CMOS integrated circuits; random processes; core-speed; dopant density; footer transistor; many-core platform; multithreshold voltage design; power variability; random process variation impact reduction; random-dopant fluctuation impact reduction; threshold voltage compensation; Equations; Mathematical model; Resource description framework; Standards; Systematics; Threshold voltage; Transistors;
Conference_Titel :
Design and Test Symposium (IDT), 2013 8th International
Conference_Location :
Marrakesh
DOI :
10.1109/IDT.2013.6727103