Title :
MOVPE-overgrowth for buried InP/(In,Ga)(As,P) laser diode arrays
Author :
Knauer, A. ; Vogel, K. ; Zeimer, U. ; Pittroff, W. ; Weyers, M. ; Wolter, P.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik Berlin, Germany
Abstract :
In this work we studied the growth kinetics of InP and (In,Ga)(As,P) during the regrowth process over rectangular mesas with ⟨011⟩ oriented sidewalls as a function of the growth temperature, of the mesa orientation and of the mesa size. We demonstrate that small changes in Tg may result in a suppression of growth on the {011} and {111}B planes. Results of overgrown laser structures for laser diode arrays demonstrate the good quality of the developed overgrowth process
Keywords :
III-V semiconductors; buried layers; gallium arsenide; indium compounds; semiconductor growth; semiconductor laser arrays; vapour phase epitaxial growth; ⟨011⟩ oriented sidewalls; InP; InP-InGaAsP; MOVPE-overgrowth; buried InP/(In,Ga)(As,P) laser diode arrays; growth kinetics; growth temperature; mesa orientation; mesa size; overgrown laser structures; rectangular mesas; regrowth process; Diode lasers; Epitaxial growth; Epitaxial layers; Indium phosphide; Inductors; Optical arrays; Semiconductor laser arrays; Shape; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522136
