DocumentCode
3133411
Title
InxGa1-xAs/InP multiquantum well structures grown on [111]B InP substrates
Author
Hopkinson, M. ; David, J.P.R. ; Khoo, E.A. ; Pabla, A.S. ; Woodhead, J. ; Rees, G.J.
Author_Institution
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
fYear
1995
fDate
9-13 May 1995
Firstpage
299
Lastpage
302
Abstract
We report the growth and characterisation of InxGa1-xAs/InP quantum well (QW) structures grown on [111]B InP substrates. Photoluminescence (PL) from a range of such structures, grown on substrates with optimum misorientation, show PL linewidths and peak positions equivalent to similar [100] structures. Structural studies, using transmission electron microscopy (TEM) and x-ray diffraction (XRD) show that multiquantum well (MQW) specimens exhibit a high degree of uniformity and a low level of defects. With increasing compressive strain (x>0.53) MQW samples eventually show relaxation, observed through an increase of the XRD peak width and through an increase in linear surface morphological features. Room temperature photocurrent measurements on strained p-i(MQW)-n diode structures show a strong excitonic blue shift, demonstrating excellent potential for low voltage, long wavelength, optical modulators
Keywords
III-V semiconductors; X-ray diffraction; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoconductivity; photoluminescence; semiconductor growth; semiconductor quantum wells; transmission electron microscopy; InxGa1-xAs/InP multiquantum well structures; InGaAs-InP; InP; MQW samples; PL linewidths; XRD peak width; [111]B InP substrates; compressive strain; excitonic blue shift; linear surface morphological features; long wavelength optical modulators; low defect level; optimum misorientation; peak positions; photoluminescence; relaxation; room temperature photocurrent measurement; strained p-i-n diode structures; structural studies; transmission electron microscopy; uniformity; x-ray diffraction; Capacitive sensors; Indium phosphide; Optical modulation; Optical surface waves; Photoluminescence; Quantum well devices; Temperature measurement; Transmission electron microscopy; X-ray diffraction; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location
Hokkaido
Print_ISBN
0-7803-2147-2
Type
conf
DOI
10.1109/ICIPRM.1995.522139
Filename
522139
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