Title :
Wavelength controllability of InGaAs/GaAs quantum dots emitting at 1.3 μm region
Author :
Ohtsuka, Nobuyuki ; Mukai, Kouki
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
In this paper, we investigate the photoluminescence (PL) emission characteristics of InGaAs/GaAs quantum dots emitting in the 1.3 μm region under various growth condition using the ALE technique. We demonstrate that the emission wavelength can be controlled by the number of ALE cycles and In composition of the buffer layer. We show the influence on emission characteristics of the supply sequence in ALE
Keywords :
III-V semiconductors; atomic layer epitaxial growth; gallium arsenide; indium compounds; optical variables control; photoluminescence; semiconductor growth; semiconductor quantum dots; 1.3 mum; ALE growth; ALE supply sequence; GaAs; InGaAs-GaAs; InGaAs/GaAs quantum dots; buffer layer composition; emission wavelength control; growth condition; photoluminescence emission characteristics; Atomic layer deposition; Buffer layers; Controllability; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Quantum dots; Substrates; Temperature; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522140
