Title :
Optical properties of self-organized InGaAs/InP dots
Author :
Ahopelto, J. ; Lipsanen, H. ; Sopanen, M.
Author_Institution :
VTT Electronics, Espoo, Finland
Abstract :
The possibility of tuning the emission wavelength and of reducing the linewidth of self-organized dots is studied. Thin layers of In0.5Ga0.5As were selectively deposited on nanoscale InP islands on (100)GaAs. A tuning range of 100 meV was achieved for the emission from the dots. Also, a minimum FWHM of 8.5 meV was measured from an ensemble of dots, showing that the heteroepitaxial layer on the islands tends to homogenize the active volume of the dots
Keywords :
III-V semiconductors; atomic force microscopy; gallium arsenide; indium compounds; island structure; nanostructured materials; photoluminescence; semiconductor quantum dots; spectral line breadth; (100) GaAs substrate; AFM images; GaAs; In0.5Ga0.5As; InGaAs-InP; active dot volume homogenization; emission wavelength tuning; heteroepitaxial layer; linewidth reduction; minimum FWHM; nanoscale InP islands; optical properties; photoluminescence spectra; self-organized InGaAs/InP dots; Atom optics; Atomic force microscopy; Atomic measurements; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Lattices; Optical surface waves; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522142
