Optical properties of self-organized InGaAs/InP dots

Author

Ahopelto, J. ; Lipsanen, H. ; Sopanen, M.

Author_Institution

VTT Electronics, Espoo, Finland

fYear

1995

fDate

9-13 May 1995

Firstpage

311

Lastpage

314

Abstract

The possibility of tuning the emission wavelength and of reducing the linewidth of self-organized dots is studied. Thin layers of In_0.5Ga_0.5As were selectively deposited on nanoscale InP islands on (100)GaAs. A tuning range of 100 meV was achieved for the emission from the dots. Also, a minimum FWHM of 8.5 meV was measured from an ensemble of dots, showing that the heteroepitaxial layer on the islands tends to homogenize the active volume of the dots

Keywords

III-V semiconductors; atomic force microscopy; gallium arsenide; indium compounds; island structure; nanostructured materials; photoluminescence; semiconductor quantum dots; spectral line breadth; (100) GaAs substrate; AFM images; GaAs; In_0.5Ga_0.5As; InGaAs-InP; active dot volume homogenization; emission wavelength tuning; heteroepitaxial layer; linewidth reduction; minimum FWHM; nanoscale InP islands; optical properties; photoluminescence spectra; self-organized InGaAs/InP dots; Atom optics; Atomic force microscopy; Atomic measurements; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Lattices; Optical surface waves; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522142

Filename

522142