• DocumentCode
    3133492
  • Title

    The influence of PCl3 on planarisation and selectivity of InP regrowth by atmospheric pressure MOVPE

  • Author

    Harlow, M.J. ; Spurdens, P.C. ; Moss, R.H.

  • Author_Institution
    Technol. Res. Unit, BT&D Technol. Ltd., Ipswich, UK
  • fYear
    1995
  • fDate
    9-13 May 1995
  • Firstpage
    329
  • Lastpage
    332
  • Abstract
    The introduction of phosphorus trichloride into the AP-MOVPE growth of InP has been found to dramatically improve the regrowth adjacent to mesa structures. By suppressing growth in the [100] direction and enhancing growth in the [311] directions planar regrowth is achieved. Polycrystalline deposits on dielectric masks can also be completely suppressed
  • Keywords
    III-V semiconductors; indium compounds; scanning electron microscopy; semiconductor growth; surface structure; vapour phase epitaxial growth; AP-MOVPE growth; InP; PCl3; PCl3 influence; [100] direction growth suppression; [311] direction growth enhancement; atmospheric pressure MOVPE; dielectric masks; mesa structures; planar regrowth; polycrystalline deposit suppression; regrowth planarisation; regrowth selectivity; Chemistry; Dielectrics; Ear; Epitaxial growth; Epitaxial layers; Indium phosphide; Inductors; Molecular beam epitaxial growth; Planarization; Temperature control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
  • Conference_Location
    Hokkaido
  • Print_ISBN
    0-7803-2147-2
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1995.522146
  • Filename
    522146
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3133492