Title :
The influence of PCl3 on planarisation and selectivity of InP regrowth by atmospheric pressure MOVPE
Author :
Harlow, M.J. ; Spurdens, P.C. ; Moss, R.H.
Author_Institution :
Technol. Res. Unit, BT&D Technol. Ltd., Ipswich, UK
Abstract :
The introduction of phosphorus trichloride into the AP-MOVPE growth of InP has been found to dramatically improve the regrowth adjacent to mesa structures. By suppressing growth in the [100] direction and enhancing growth in the [311] directions planar regrowth is achieved. Polycrystalline deposits on dielectric masks can also be completely suppressed
Keywords :
III-V semiconductors; indium compounds; scanning electron microscopy; semiconductor growth; surface structure; vapour phase epitaxial growth; AP-MOVPE growth; InP; PCl3; PCl3 influence; [100] direction growth suppression; [311] direction growth enhancement; atmospheric pressure MOVPE; dielectric masks; mesa structures; planar regrowth; polycrystalline deposit suppression; regrowth planarisation; regrowth selectivity; Chemistry; Dielectrics; Ear; Epitaxial growth; Epitaxial layers; Indium phosphide; Inductors; Molecular beam epitaxial growth; Planarization; Temperature control;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522146
