Title :
InAlGaAs selective MOVPE growth with bandgap energy shift
Author :
Takeuchi, T. ; Tsuji, M. ; Makita, K. ; Taguchi, K.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
Selective MOVPE of InAlGaAs with almost no polycrystalline growth was achieved. The composition change was also observed in selective InAlGaAs growth. The In content is enhanced with wider mask width, which makes the bandgap energy smaller. A large photoluminescence (PL) peak wavelength shift of 170 nm with a mesa width of 2 μm and a mask width of 40 μm was achieved. This is the first report on bandgap energy control in InAlGaAs selective growth
Keywords :
III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; indium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 2 mum; 40 mum; In content; InAlGaAs; InAlGaAs selective MOVPE growth; bandgap energy control; bandgap energy shift; composition change; large photoluminescence peak wavelength shift; mask width; mesa width; partially masked substrates; Conducting materials; Energy measurement; Epitaxial growth; Epitaxial layers; Fabrication; Gas lasers; National electric code; Photonic band gap; Scanning electron microscopy; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522149
