InAlGaAs selective MOVPE growth with bandgap energy shift

Author

Takeuchi, T. ; Tsuji, M. ; Makita, K. ; Taguchi, K.

Author_Institution

Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

341

Lastpage

344

Abstract

Selective MOVPE of InAlGaAs with almost no polycrystalline growth was achieved. The composition change was also observed in selective InAlGaAs growth. The In content is enhanced with wider mask width, which makes the bandgap energy smaller. A large photoluminescence (PL) peak wavelength shift of 170 nm with a mesa width of 2 μm and a mask width of 40 μm was achieved. This is the first report on bandgap energy control in InAlGaAs selective growth

Keywords

III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; indium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 2 mum; 40 mum; In content; InAlGaAs; InAlGaAs selective MOVPE growth; bandgap energy control; bandgap energy shift; composition change; large photoluminescence peak wavelength shift; mask width; mesa width; partially masked substrates; Conducting materials; Energy measurement; Epitaxial growth; Epitaxial layers; Fabrication; Gas lasers; National electric code; Photonic band gap; Scanning electron microscopy; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522149

Filename

522149