High-speed waveguide photodetectors

Author

Kato, Kazutoshi ; Akatsu, Yuji

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

349

Lastpage

352

Abstract

Photodetectors offering wide bandwidths and high efficiency are indispensable devices for high-speed optical transmission systems. This paper reviews a proposed multimode waveguide pin-photodiode with a mushroom-mesa structure. This photodiode has a 3-dB bandwidth of 110 GHz and an external quantum efficiency of 50 % at a wavelength of 1.55 μm. A high-speed monolithically integrated photoreceiver using the waveguide pin-photodiode is also presented

Keywords

high-speed optical techniques; infrared detectors; integrated optoelectronics; optical receivers; optical waveguides; p-i-n photodiodes; photodetectors; 1.55 mum; 110 GHz; 50 percent; external quantum efficiency; high efficiency; high-speed monolithically integrated photoreceiver; high-speed optical transmission systems; high-speed waveguide photodetectors; multimode waveguide pin-photodiode; mushroom-mesa structure; wavelength; wide bandwidths; Absorption; Bandwidth; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical devices; Optical surface waves; Optical waveguides; Photodetectors; Photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522151

Filename

522151