A study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique

Author

Guan, Hao ; Cho, Byung Jin ; Li, M.-F. ; He, Y.D. ; Xu, Zhen ; Dong, Zhong

Author_Institution

Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore

fYear

1999

fDate

1999

Firstpage

81

Lastpage

84

Abstract

The quasi-breakdown (QB) mechanism of ultrathin gate oxide (35 Å) under high field stress was investigated using the DCIV technique. It was found that under various stress conditions, the charge to QB is exponentially dependent on the stressing gate voltage, while the interface state densities always reach the same value at the QB onset point. Thus, we conclude that quasi-breakdown in ultra-thin oxides is triggered by a critical interface states density

Keywords

CMOS integrated circuits; dielectric thin films; electric breakdown; electric current; electronic density of states; failure analysis; high field effects; integrated circuit reliability; integrated circuit testing; interface states; 35 angstrom; CMOS technology; DCIV technique; QB onset point; SiO₂-Si; charge to QB; charge to quasi-breakdown; critical interface states density; high field stress; interface state densities; quasi-breakdown mechanism; stress conditions; stressing gate voltage; ultra-thin gate oxide; Bipolar transistors; CMOS technology; Current measurement; Electric breakdown; Interface states; Leakage current; Semiconductor device noise; Stress; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 1999. Proceedings of the 1999 7th International Symposium on the

Print_ISBN

0-7803-5187-8

Type

conf

DOI

10.1109/IPFA.1999.791310

Filename

791310